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Data Sheet No. PD60253
IRS2111(S)PbF
HALF-BRIDGE DRIVER
Features
? Floating channel designed for bootstrap operation
? Fully operational to +600 V
? Tolerant to negative transient voltage, dV/dt
immune
? Gate drive supply range from 10 V to 20 V
? Undervoltage lockout for both channels
? CMOS Schmitt-triggered inputs with pull-down
? Matched propagation delay for both channels
? Internally set deadtime
? High-side output in phase with input
? RoHS compliant
Description
Product Summary
V OFFSET 600 V max.
I O +/- 200 mA / 420 mA
V OUT 10 V - 20 V
t on/off (typ.) 750 ns & 150 ns
Deadtime (typ.) 650 ns
Packages
The IRS2111 is a high voltage, high speed power MOSFET and
IGBT driver with dependent high-side and low-side referenced
output channels designed for half-bridge applications. Propri-
etary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic input is compatible
with standard CMOS outputs. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-
conduction. Internal deadtime is provided to avoid shoot-through
in the output half-bridge. The floating channel can be used to
8-Lead PDIP
IRS2111PbF
8-Lead SOIC
IRS21111SPbF
drive an N-channel power MOSFET or IGBT in the high-side con-
figuration which operates up to 600 V.
Typical Connection
up to 600 V
V CC
V CC
V B
IN
IN
HO
COM
V S
TO
LOAD
LO
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
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相关代理商/技术参数
IRS2111SPbF 功能描述:功率驱动器IC HALF BRDG DRVR 600V 650ns 200mA RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2111STRPBF 功能描述:功率驱动器IC Hlf Brdg Drvr Fixed 650ns Deadtime RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2112-1PBF 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER
IRS2112-2PBF 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER
IRS2112PBF 功能描述:功率驱动器IC Hi&Lw Sd Drvr ShutDwn Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2112PBF 制造商:International Rectifier 功能描述:MOSFET Driver IC
IRS2112SPbF 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 200mA 135ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2112STRPBF 功能描述:功率驱动器IC Hi&Lw Sd Drvr ShutDwn Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube